NGTB40N120LWG On Semiconductor ON Semiconductor NGTB40N120LWG N-channel IGBT Transistor, 80 A 1200 V, 3-Pin TO-247
Part Nnumber
NGTB40N120LWG
Description
ON Semiconductor NGTB40N120LWG N-channel IGBT Transistor, 80 A 1200 V, 3-Pin TO-247
The product with part number NGTB40N120LWG (ON Semiconductor NGTB40N120LWG N-channel IGBT Transistor, 80 A 1200 V, 3-Pin TO-247)
is from company On Semiconductor and distributed with basic unit price 5,25 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dual Collector Dimensions16.26 x 5.3 x 21.08mm Height21.08mm Length16.26mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current80 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation260 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Width5.3mm Product Details IGBT Discretes, ON Semiconductor IGBT Discretes, ON Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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