NGTB30N120IHRWG On Semiconductor ON Semiconductor NGTB30N120IHRWG N-channel IGBT Transistor, 60 A 1200 V, 1MHz, 3-Pin TO-247
Part Nnumber
NGTB30N120IHRWG
Description
ON Semiconductor NGTB30N120IHRWG N-channel IGBT Transistor, 60 A 1200 V, 1MHz, 3-Pin TO-247
The product with part number NGTB30N120IHRWG (ON Semiconductor NGTB30N120IHRWG N-channel IGBT Transistor, 60 A 1200 V, 1MHz, 3-Pin TO-247)
is from company On Semiconductor and distributed with basic unit price 5,18 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions16.25 x 5.3 x 21.4mm Height21.4mm Length16.25mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current60 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation384 W Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Switching Speed1MHz Width5.3mm Product Details IGBT Discretes, ON Semiconductor IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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