NGB8207ABNT4G On Semiconductor ON Semiconductor NGB8207ABNT4G N-channel IGBT Transistor, 50 A 365 V, 4-Pin D2PAK
Part Nnumber
NGB8207ABNT4G
Description
ON Semiconductor NGB8207ABNT4G N-channel IGBT Transistor, 50 A 365 V, 4-Pin D2PAK
The product with part number NGB8207ABNT4G (ON Semiconductor NGB8207ABNT4G N-channel IGBT Transistor, 50 A 365 V, 4-Pin D2PAK)
is from company On Semiconductor and distributed with basic unit price 1,82 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationDual Collector Dimensions10.29 x 9.65 x 4.83mm Height4.83mm Length10.29mm Maximum Collector Emitter Voltage365 V Maximum Continuous Collector Current50 A Maximum Gate Emitter Voltage±15V Maximum Operating Temperature+175 °C Maximum Power Dissipation165 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeD2PAK Pin Count4 Width9.65mm Product Details IGBT Discretes, ON Semiconductor IGBT Discretes, ON Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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