MJD122G On Semiconductor ON Semi MJD122G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin D-PAK
Description
ON Semi MJD122G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin D-PAK
The product with part number MJD122G (ON Semi MJD122G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin D-PAK)
is from company On Semiconductor and distributed with basic unit price 0,64 EUR. Minimal order quantity is 1 pc.
ConfigurationSingle Dimensions6.73 x 6.22 x 2.38mm Height2.38mm Length6.73mm Maximum Base Emitter Saturation Voltage4.5 V Maximum Collector Base Voltage100 V Maximum Collector Cut-off Current0.01mA Maximum Collector Emitter Saturation Voltage4 V Maximum Collector Emitter Voltage100 V Maximum Continuous Collector Current8 A Maximum Emitter Base Voltage5 V Maximum Operating Temperature+150 °C Minimum DC Current Gain100 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeD-PAK Pin Count3 Transistor TypeNPN Width6.22mm Product Details NPN Darlington Transistors, ON Semiconductor Bipolar Transistors, ON Semiconductor A wide range of Bipolar Transistors from ON Semiconductor, which includes the following categories: Small Signal TransistorsGeneral Purpose TransistorsDual NPN and PNP TransistorsPower TransistorsHigh Voltage TransistorsRF Bipolar TransistorsLow Noise, Dual Matched and Complex Bipolar Transistors
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