Product Details for Material from On Semiconductor - NSS1C201MZ4T1G - Bipolar Transistors - BJT 100V, NPN Low VCE Trans.

NSS1C201MZ4T1G On Semiconductor Bipolar Transistors - BJT 100V, NPN Low VCE Trans.

Part Nnumber
NSS1C201MZ4T1G
Description
Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
Producer
On Semiconductor
Basic price
0,67 EUR

The product with part number NSS1C201MZ4T1G (Bipolar Transistors - BJT 100V, NPN Low VCE Trans.) is from company On Semiconductor and distributed with basic unit price 0,67 EUR. Minimal order quantity is 1 pc, Approx. production time is 12 weeks.


ON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: ON Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 140 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 7 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-223 DC Collector/Base Gain hFE Min: 150 at 10 mA at 2 V, 120 at 0.5 A at 2 V, 80 at 1 A at 2 V, 40 at 2 A at 2 V DC Current Gain hFE Max: 150 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Packaging: Reel Series: NSS1C201MZ4 Factory Pack Quantity: 1000


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