BC846BDW1T1G On Semiconductor Bipolar Transistors - BJT 100mA 80V Dual NPN

Part Nnumber
BC846BDW1T1G
Description
Bipolar Transistors - BJT 100mA 80V Dual NPN
Producer
On Semiconductor
Basic price
0,35 EUR

The product with part number BC846BDW1T1G (Bipolar Transistors - BJT 100mA 80V Dual NPN) is from company On Semiconductor and distributed with basic unit price 0,35 EUR. Minimal order quantity is 1 pc, Approx. production time is 4 weeks.


ON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: ON Semiconductor Configuration: Dual Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SC-70-6 DC Collector/Base Gain hFE Min: 200 Maximum Power Dissipation: 380 mW Minimum Operating Temperature: - 55 C Packaging: Reel Series: BC846B Factory Pack Quantity: 3000


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